FQP3N80C, FQPF3N80C دیتاشیت

FQP3N80C, FQPF3N80C

مشخصات دیتاشیت

نام دیتاشیت FQP3N80C, FQPF3N80C
حجم فایل 907.849 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FQP3N80C, FQPF3N80C

دانلود دیتاشیت

سایر مستندات

FQPF3N80C 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQPF3N80C
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 39W
  • Total Gate Charge (Qg@Vgs): 16.5nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 705pF@25V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8Ω@10V,1.5A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FQPF3
  • detail: N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F

محصولات مشابه